To achieve high optical power as well as low vertical divergence angle,a new kind of optim ized large opti- cal cavity (L OC) structure is applied to a ridge waveguide 980 nm In Ga As/ Ga As/ Al Ga As m ulti- quantum well laser.The optical power density in the waveguide is successfully reduced.The maxim um output power is more than 40 0 m W with a slope efficiency of 0 .89W/ A and the far- field vertical divergence angle is lowered to 2 3°.
GaNAs alloy is grown by metalorganic chemical vapor deposition (MOCVD) using dimethylhydrazine (DMHy) as the nitrogen precursor.High resolution X ray diffraction (HRXRD) and secondary ion mass spectro metry (SIMS) are combined in determining the nitrogen contents in the samples.Room temperature photoluminescence (RTPL) measurement is also used in characterizing.The influence of different Ga precursors on GaNAs quality is investigated.Samples grown with triethylgallium (TEGa) have better qualities and less impurity contamination than those with trimethylgallium (TMGa).Nitrogen content of 5 688% is achieved with TEGa.The peak wavelength in RTPL measurement is measured to be 1278 5nm.
