An optimized condition for defect passivation by the hot-wire technique was established. Effects of hydrogenation for polycrystalline SiGe （poly-Si1-xGex ） thin films were estimated by investigating the dark conductivity and activation energy that derive from the conductivity as a function of the temperature. The results show that this technique can effectively reduce defects present in poly-Si1-xGex films. By optimizing the substrate and filament temperatures,the treatment can be accomplished in a short time of 20-30min, which is considerably shorter than other hydrogenation techniques.
