The high-density carbon nanotubes （CNTs） are synthesized on Fe/Si substrate in the mixture of acetylene and hydrogen gas by radio frequency plasma enhanced chemical vapor deposition （RF-PECVD） method. The effects of substrate temperature on the growth of CNTs are studied by scanning electron microscopy （SEM）, transmission electron microscopy （TEM） and Raman spectroscopy. The quality of CNTs is improved considerably by increasing the substrate temperature while the beam density is increased and graphitization degree （ID/IG） is enhanced. The best aligned CNTs are prepared at 750 ℃, the beam density is about 1.6 - 103/gm^2, and ID/IG is about 0.93. Temperature influence is also discussed.
AlN films with preferred c-axis orientation are deposited on Si substrates using the radio frequency(RF) magnetron sputtering method.The post-processing is carried out under the cooling conditions including high vacuum,low vacuum under deposition gas ambient and low vacuum under dynamic N2 ambient.Structures and morphologies of the films are analyzed by X-ray diffraction(XRD) and atomic force microscopy(AFM).The hardness and Young's modulus are investigated by the nanoindenter.The experimental results indicate that the(100) and(110) peak intensities decrease in the XRD spectra and the root-mean-square of roughness(Rrms) of the film decreases gradually with the increase of the cooling rate.The maximum values of the hardness and Young modulus are obtained by cooling in low vacuum under deposition gas ambient.The reason for orientation variation of the films is explained from the perspective of the Al-N bond formation.
Flexible TiO2 memory devices are fabricated on a plastic substrate at room temperature. The metal-insulator-metal (MIM) structure is grown on polyimide (PI). Several metals with different ductilities, such as Al, W, Cu and Ag, are selected as electrode. The test results show that the samples have stable resistive switching behaviors, and the electric characteristics can stay stable even after the radius of substrate is bent up to 10 mm. After 103 times of substrate bend-ing, the memory cells with W as bottom electrode on PI still show stable resistive switching characteristics and low switching voltages. The set voltage and reset voltage can be as low as 0.9 V and 0.3 V, respectively.
We investigate the resistive switching characteristics of a Cu/VOx/W structure. The VOx film is deposited by radio- frequency magnetron sputtering on the Cu electrode as a dielectric layer. The prepared VOx sample structure shows reproducible bipolar resistive switching characteristics with ultra-low switching voltage and good cycling endurance. A modified physical model is proposed to elucidate the typical switching behavior of the vanadium oxide-based resistive switching memory with a sudden resistance transition, and the self-saturation of reset current as a function of compliance current is observed in the test, which is attributed to the conducting mechanism is discussed in detail. growth pattern of the conducting filaments. Additionally, the related
