Step channel direct injection(SCDI)flash memory device which had been developed changes the hot carrier injection method by making a shallow step in the middle of channel .Therefore high speed for programming,high efficiency for injection,and lower working voltage are obtained.Simulation and analysis for the proposed SCDI structure device are done and an optimization scheme to improve the utmost performance of SCDI device is given...
Proposed herein is a novel non planar cell structure for flash memory which has been fabricated to achieve high programming speed with low operating voltage.This memory cell preserves a simple stacked gate structure which only requires an additional masking step to form the novel structure in the channel.For the cell of the 1 2μm gate length,the programming speed of 43μs under the measuring condition of V g=15V, V d=5V,and the erasing time of 24ms under V g=-5V, V s=8V are obtained.The programming speed is faster than that of the conventional planar cell structure.This superior programming speed makes it suitable for high speed application.
