采用紫外脉冲激光沉积技术分别在LaA lO 3(LAO)、(LaA lO 3)0.3-(SrA lT aO 6)0.7(LSAT)和SrT iO 3(STO)(001)单晶衬底上制备了La0.825Ca0.175MnO 3(LCMO)薄膜。实验发现衬底的晶格失配度和退火氧压对薄膜结晶质量和电学性能有重要影响。电阻-温度曲线显示,生长在LAO(压应变)的LCMO薄膜比生长在STO(拉伸应变)的薄膜有更高的绝缘体-金属转变温度Tp和更大的电阻温度系数(TCR)。增加退火氧压可以有效地提高薄膜的Tp和TCR值。当退火氧压为30000 Pa时,与衬底晶格失配度最小的LCMO/LSAT薄膜具有最高的Tp(234.5 K)和最大的TCR(22.4%)。实验结果表明Ca含量为0.175的La1-xCaxMnO 3薄膜材料在测辐射热计等方面有潜在的应用前景。
La0.72Ca0.28MnO3 thin films were deposited on untilted and 15° tilted LaAlO_3 （100） single crystalline substrates by pulsed laser deposition. The polycrystalline targets used in the deposition process were synthesized by sol-gel and coprecipitation methods, respectively. The structure, electrical transport properties and surface morphology of the targets and films were studied. It is found that, compared with coprecipitation method, the sol-gel target has more homogeneous components and larger density and grain size, thus the higher insulator-metal transition temperature and larger temperature coefficient of resistivity. The thin film prepared by sol-gel target has a uniform grain size and higher quality. The metal-insulator transition temperature is higher and the laser induced voltage signal is larger. Preparing the target by sol-gel method can largely improve the properties of corresponding thin films in pulsed laser deposition process.
