Boron-doped zinc oxide transparent （BZO） films were prepared by sol-gel method. The effect of pyrolysis temperature on the crystallization behavior and properties was systematically investigated. XRD patterns revealed that the BZO films had wurtzite structure with a preferential growth orientation along the c-axis. With the increase of pyrolysis temperature, the particle size and surface roughness of the BZO films increased, suggesting that pyrolysis temperature is the critical factor for determining the crystallization behavior of the BZO films. Moreover, the carrier concentration and the carrier mobility increased with increasing the pyrolysis temperature, and the mean transmittance for every film is over 90% in the visible range.
有机-无机杂化甲氨铅碘类钙钛矿太阳能电池在制备及使用过程中,甲氨铅碘层中的甲基铵离子易分解为甲基离子/基团和氨离子/基团,其中氨离子/基团可以扩散进入铟锡氧化物(indium tin oxide,ITO)透明电极层,并影响ITO的电学性质.本文通过低能氨离子束与ITO薄膜表面相互作用,研究低能氨离子/基团在ITO薄膜表面扩散过程,及其对ITO薄膜电学性质的影响规律.研究结果表明,低能氨离子/基团在ITO薄膜表面扩散过程中,主要与ITO晶格中的O元素结合形成In/Sn-O-N键.ITO不同晶面的O元素含量不同,低能氨离子/基团能够在无择优ITO薄膜表面的各个晶面进行扩散,因此将严重影响其电学性质,导致无择优ITO薄膜电阻率增加约6个数量级.但(100)择优取向ITO薄膜的主晶面为(100)晶面,最外层由In/Sn元素构成,不含O元素.因此(100)择优取向ITO薄膜能够有效地抑制低能氨离子/基团扩散,并保持原始电学性质.最终,(100)择优取向ITO薄膜有望成为理想的有机-无机杂化甲氨铅碘类钙钛矿太阳能电池用透明电极层材料.
