A temperature-dependent model for threshold voltage and potential distribution of fully depleted silicon-on- insulator metal-oxide-semiconductor field-effect transistors is developed. The two-dimensional potential distribution function in the silicon thin film based on an approximate parabolic function has been applied to solve the two-dimensional Poisson＇s equation with suitable boundary conditions. The minimum of the surface potential is used to deduce the threshold voltage model. The model reveals the variations of potential distribution and threshold voltage with temperature, taking into account short-channel effects. Furthermore, the model is verified by the SILVACO ATLAS simulation. The calculations and the simulation agree well.
Asymmetric doping channel （AC） partially depleted （PD） silicon-on-insulator （SOI） devices are simulated using two-dimensional simulation software. The electrical characteristics such as the output characteristics and the breakdown voltage are studied in detail. Through simulations,it is found that the AC PD SOI device can suppress the floating effects and improve the breakdown characteristics over conventional partially depleted silicon-on-insulator devices. Also compared to the reported AC FD SOI device,the performance variation with device parameters is more predictable and operable in industrial applications. The AC FD SO1 device has thinner silicon film, which causes parasitical effects such as coupling effects between the front gate and the back gate and hot electron degradation effects.
