The diameter of Czochralski (Cz) sapphire crystals is 50 mm. The sapphire substrates were lapped by using diamond powders and polished by chemical mechanical polishing(CMP) method using alkali slurry with SiO2 abrasive. After obtaining the smooth surfaces, the chemical etching experiments were processed by using fused KOH and NaOH etchants at different temperature for different times. The dislocation was observed by means of optical microscope and scanning electron microscope. The clear and stable contrast images of sample etching pits were observed. On the whole, the dislocation density is about 104?105 cm?2. Comparing the results under the conditions of different etchants, temperatures and times during the etching proceeding, it was found that the optimal condition for dislocation displaying is etching 15 min with fused KOH at 290 ℃. At the same time, the formation of the etch pits and the reducing method of dislocation density were also discussed.
A new type of magnetic device was used to replace the conventionalelectro-magnetic field for CZSi (doped with Ge) growth. The device was composed of three permanentmagnetic rings and called PMCZ device. The lines of magnetic force are horizontally distributed atradial 360℃. Using the ring permanent magnetic field, thermal convection in melt and centrifugalpumping flows due to crystal rotation could be strongly suppressed so that the fluctuations oftemperature and micro-growth rate at solid/liquid interface could be restrained effectively. In thePMCZ condition, the growing environment of SiGe bulk single crystal was similar to the crystalgrowth in space under the condition of micro-gravity. The motion of impurities (Ge, oxygen, etc.)had been controlled by diffusion near the solid/liquid interface. Oxygen concentration became lowerand the distribution of composition became more homogeneous along longitudinal direction and acrossa radial section in the grown SiGe crystal. The mechanism of PMCZ superior to MCZ was alsodiscussed.
ZHANG Weilian, NIU Xinhuan, CHEN Hongjian, ZHANG Jianxin, SUN Junsheng, and ZHANG EnhuaiSemiconductor Material Institute, Hebei University of Technology, Tian jin 300130, China
