Simulation method is used to provide a guideline f or ultra thin body(UTB) MOSFET designs.Three important parameters of the UTB MOS FE T,i.e.the raised S/D height,Ge mole fraction of the Ge xSi 1-x gate,and the silic on body thickness,are comprehensively analyzed and optimized.The optimal region of feasible Ge mole fraction and the silicon body thickness for low operating po wer device are given.As the simulation results show that through changing Ge mole fraction coupl ed with the silicon body thickness tuning,UTB device with good performance can b e obtained.
