We study shot noise in tunneling current through a double quantum dot connected to two electric leads. We derive two master equations in the occupation-state basis and the eigenstate basis to describe the electron dynamics. The approach based on the occupation-state basis, despite being widely used in many previous studies, is valid only when the interdot coupling strength is much smaller than the energy difference between the two dots. In contrast, the calculations using the eigenstate basis are valid for an arbitrary interdot coupling. Using realistic model parameters, we demonstrate that the predicted currents and shot-noise properties from the two approaches are significantly different when the interdot coupling is not small. Furthermore, properties of the shot noise predicted using the eigenstate basis successfully reproduce qualitative features found in a recent experiment.
In this paper the master equation method is used to calculate the relaxation and decoherence times of a qubit. The results are beyond Markovian approximation, where the noise spectrum is assumed to be wide-band, so that they are valid for not only the wide- but also the narrow-band noises, which may be the main decoherence source in solid-state qubits. Moreover, for some special cases, analytical results can be achieved, which are consistent with those derived by others.
Nb/Al-AlOx/Nb tunnel junctions with controllable critical current density Jc are fabricated using the standard selective Nb etching process. Tunnel barriers are formed in different oxygen exposure conditions （oxygen pressure P and oxidation time t）, giving rise to Jc ranging from 100A/cm^2 to above 2000A/cm^2. Jc shows a familiar linear dependence on P×t in logarithmic scales. We calculate the energy levels of the phase- and flux-type qubits using the achievable junction parameters and show that the fabricated Nb/Al-AlOx/Nb tunnel junctions can be used conveniently for quantum computation applications in the future.
Switching current distributions of an Nb/Al-AlO2/Nb Josephson junction are measured in a temperature range from 25 mK to 800 mK. We analyse the phase escape properties by using the theory of Larkin and Ovchinnikov （LO） which takes discrete energy levels into account. Our results show that the phase escape can be well described by the LO approach for temperatures near and below the crossover from thermal activation to macroscopic quantum tunneling. These results are helpful for further study of macroscopic quantum phenomena in Josephson junctions where discrete energy levels need to be considered.
