Ca0.4Sr0.6Bi3.95Nd0.05Ti4O15 （C0.4S0.6BNT） ferroelectric thin films were prepared on Pt/Ti/SiO2/Si substrates by sol-gel method. Effect of annealing process （time and temperature） on structures and ferroelectric properties of C0.4S0.6BNT thin film was investigated. The relative intensity of （200） peak increased first then decreased with annealing temperature and became predominant at 800 ℃. In contrast, no evident change could be observed in the （001） peak. The remnant polarization （Pr） and coercive field （Ec） for C0.4S0.6BNT film annealed at 800℃ for 5 min were 21.6μC/cm2 and 68.3 kV/cm, respectively.
Neodymium-doped strontium bismuth titanate （SrBi4-xNdxTi4O15） ferroelectric thin films were fabricated using the sol-gel method on Pt/Ti/SiO2/Si substrates. The influence of Nd content on the microstructure and ferroelectric properties of SrBi4-xNdxTi4O15 thin films were systematically studied. The results indicated that the SrBi3.88Nd0.12Ti4O15 （SBNT0.12） thin films had better ferroelectric properties, with a remanent polarization of （2Pr） of 34.3 μC/cm^2 and a coercive field （2Ec） of 220 kV/cm. This could be attributed to the fact that SBNT0.12 ferroelectric thin films consisted of more and larger ball-like grains, approximately 150-200 nm, with structure distortion, which greatly contributed to the improvement of the ferroelectric properties of the films. Furthermore, the film exhibited a good fatigue resistant property. The value of 2Pr after 10^10 switching cycles did not change significantly. The SrBi3.88Nd0.12Ti4O15 films were promising candidates for the application of FeRAMs.
Predominantly （100）-oriented Ca0.4Sr0.6Bi4Ti4O15 （C0.4S0.6BTi） thin films were prepared on Pt （111）/Ti/SiO2/Si substrates by a sol-gel method at annealing temperatures ranging from 650 to 850 ℃.The growth mode of the predominantly （100）-oriented C0.4S0.6 BTi thin films fabricated by the sequential layer annealing was discussed based on the structure evolution with the annealing temperature.The remnant polarization and coercive field of the C0.4S0.6 BTi film annealed at 800 ℃ are 16.1 μC/cm 2 and 85 kV/cm,respectively.No evident fatigue can be observed after 10 9 switching cycles.
