A CMOS FinFET fabricated on bulk silicon substrate is demonstrated.Besides owning a FinFET structure similar to the original FinFET on SOI,the device combines a grooved planar MOSFET in the Si substrate and the fabrication processes are fully compatible with conventional CMOS process,including salicide technology.The CMOS device,inverter,and CMOS ring oscillator of this structure with normal poly silicon and W/TiN gate electrode are fabricated respectively.Driving current and sub threshold characteristics of CMOS FinFET on Si substrate with actual gate length of 110nm are studied.The inverter operates correctly and minimum per stage delay of 201 stage ring oscillator is 146ps at V d=3V.The result indicates the device is a promising candidate for the application of future VLSI circuit.
AIGaN/GaN HEMTs are investigated by numerical simulation from the self-consistent solution of Schr6dinger-Poisson-hydrodynamic （HD） systems. The influences of polarization charge and quantum effects are considered in this model. Then the two-dimensional conduction band and electron distribution, electron temperature characteristics, Id versus Vd and Id versus Vg, transfer characteristics and transconductance curves are obtained. Corresponding analysis and discussion based on the simulation results are subsequently given.
