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国家重点基础研究发展计划(2006CB932801)

作品数:4 被引量:2H指数:1
相关作者:郑厚植赵建华章昊朱汇甘华东更多>>
相关机构:中国科学院更多>>
发文基金:国家重点基础研究发展计划国家自然科学基金更多>>
相关领域:理学自然科学总论更多>>

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4 条 记 录,以下是 1-4
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Spin injection in the multiple quantum-well LED structure with the Fe/AlO_x injector
2010年
A spin-injection/-detection device has been fabricated based on the multiple quantum well light emitting diode (LED) structure. It is found that only a broad electroluminescence (EL) peak of a full width at half maximum of 8.6 nm appears at the wavelength of 801 nm in EL spectra with a circular luminescence polarization degree of 18%, despite PL spectra always show three well resolved peaks. The kinetic energy gained by injected electrons and holes in their drift along opposite directions broadens the EL peak, and makes three EL peaks converge together. The same process also destroys the injected spin polarization of electrons mainly dominated by the Bir-Aronov-Pikus spin relaxing mechanism.
Hao WuHouZhi ZhengJian LiuGuiRong LiPing XuHui ZhuHao ZhangJianHua Zhao
关键词:SPINTRONICSEMITTINGDIODEMULTIPLE
一种新型高增益、低噪声980nm微腔半导体光放大器的数值分析(英文)
2008年
提出了一种新型微腔半导体光放大器结构,该半导体放大器在普通行波光放大器的波导结构上引入了上下布拉格反射镜,并在波导前后两侧的上端面上分别刻蚀出入射和出射光学窗口,其上蒸镀增透膜层.信号光以一定的倾角斜入射到波导中,以之字型路线沿波导传播.提出了一个完整的、考虑了微腔特性的稳态模型,系统模拟了微腔半导体光放大器的特性.结果表明该微腔半导体光放大器的光纤到光纤增益可达40dB,而噪声指数只有3.5dB.
张泉郑厚植
关键词:半导体光放大器布拉格反射镜增益噪声指数
Ultrafast photo-induced turning of magnetization and its relaxation dynamics in GaMnAs
2010年
We report that,by linearly polarized pumping of different wavelengths,Kerr transients appear at zero magnetic field only in the case when GaMnAs samples are initialized at 3 K by first applying a 0.8 Tesla field and then returning to zero field.We find that,instead of magnetization precession,the near-band gap excitation induces a coherent out-of-plane turning of magnetization,which shows very long relaxation dynamics with no precession.When photon energy increases,the peak value of the Kerr transient increases,but it decays rapidly to the original slow transient seen under the near-band-gap excitation.
LUO Jing,ZHENG HouZhi,SHEN Chao,ZHANG Hao,ZHU Ke,ZHU Hui,LIU Jian,LI GuiRong,JI Yang & ZHAO JianHua State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
关键词:DILUTETIME-RESOLVEDKERRPRECESSION
磁各向异性对(In,Ga)As衬底(Ga,Mn)As的影响(英文)被引量:2
2011年
在(In,Ga)As缓冲层中生长的Ga0.95Mn0.05As薄膜的磁光圆二向色性(MCD)扫描磁场的测量中发现异常现象,这一现象出现在外磁场把样品的磁化矢量扭转到与入射光方向一致或远离入射光方向之时.通过磁各向异性的平均场理论,我们认为这实际上是磁各向异性对带-带跃迁影响的表现,是由于空穴带劈裂和E-k色散关系均与磁化方向相关而引起的.
朱科郑厚植甘华东刘剑朱汇章昊李桂荣赵建华
关键词:磁光效应振荡磁各向异性
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