CuA1O2 thin films have been prepared by the chemical solution deposition method on both n-Si and p-Si substrates. X-ray diffraction analysis indicates that the obtained CuA1O2 films have a single delafossite structure. The current transport properties of the resultant p-CuA1O2/n-Si and p-CuA1O2/p-Si heterojunctions are investigated by current-voltage measurements. The p-CuA1O2/n-Si has a rectifying ratio of -35 within the applied voltages of -3.0 to ＋3.0 V, while the p-CuA1O2/p-Si shows Schottky diode-like characteristics, dominated in forward bias by the flow of space-charge-limited current.
