高Ge组分的SiGe薄膜在应变硅、应变锗以及高速器件的应用前景十分广阔。本文以Si/SiGe/SOI(绝缘体上的硅)结构为初始样品,设计了系统性的氧化浓缩实验,通过大量的分析和参数调整,制备获得了不同组分比的绝缘体上锗硅(SiGe on insulator,SGOI)薄膜样品。结合X射线衍射(XRD)和拉曼光谱(Raman)等测试手段表征了制备样品的晶格质量和元素组分,其中Ge组分最高达到80.5%。综合分析表明:在适当的条件下,Ge组分和浓缩时间线性关系明显,浓缩制备SGOI材料可以做到组分可控性,为相关的进一步研究提供便利。
We make a detailed study on the angular differential cross sections of positron–hydrogen collisions by using the momentum-space coupled-channels optical（CCO） method for incident energies below the H ionization threshold. The target continuum and the positronium（Ps） formation channels are included in the coupled-channels calculations via a complex equivalent-local optical potential. The critical points, which show minima in the differential cross sections, as a function of the scattering angle and the incident energy are investigated. The resonances in the angular differential cross sections are reported for the first time in this energy range. The effects of the target continuum and the Ps formation channels on the different cross sections are discussed.
