Asymmetric broad-waveguide separate-confinement heterostructure（BW-SCH） quantum well（QW） laser diode emitting at 808 nm is analyzed and designed theoretically.The dependence of the optical field distribution, vertical far-field angle,and internal loss on different thicknesses of the upper waveguide layer is calculated and analyzed.Calculated results show that when the thicknesses of the lower and upper waveguide layers are 0.45 and 0.3μm,respectively,for the devices with 100-μm-wide stripe and 1000-μm-long cavity,an output power of 7.6 W at 8 A,a vertical far-field angle of 37°,a slope efficiency of 1.32 W/A, and a threshold current of 189 mA can be obtained.
6H-SiC bulk crystals have been prepared by sublimation method in an inductively heated growth reactor. The effect of nitrogen doping on absorption for 6H-SiC was investigated. The absorption measurement based on optical method is a non-destructive and non-contact method. The band-gap narrowing with higher doping concentration was observed. For n-type doping below band-gap absorption band at 623 nm for 6H-SiC was observed. The peak intensity of the absorption band increased with increasing charge carrier concentration obtained from Hall measurements. It is also found that the nitrogen doping level decreased in the radial direction and it was the highest at the beginning of growth.
SiC substrates grown by the sublimation method still have high densities of structural defects such as dislocations,micropipes,low-angle grain boundaries,macrodefects and polytypes.Wet etching was effectively used to study the defects of SiC.Etch pit shapes of defects and their origins were discussed.Most of the defects originate in the initial growth stage.Thus to optimize the early growth conditions especially the temperature distribution is a crucial problem.
Li JuanWang YingminChen XiufangXu XiangangHu XiaoboJiang Minhua
Residual stresses in SiC wafers, which were introduced during production processes including sawing, lapping, mechanical polishing （MP）, and chemical-mechanical polishing （CMP）, were evaluated in terms of changes in radius of curvature and high-resolution X-ray diffractometer （HRXRD） measurements. It was found that annealing was an effective method to reduce stress fields and to improve the wafer flatness. Lapping process generated more residual stresses than other machining processes, and these stresses could be relaxed by thermal treatment. The results showed that annealing was an essential procedure following lapping in the whole production process. The molten KOH etching results accounted for the correlation between the relaxation of stresses and the creation of basal screw dislocations.
CHEN Xiufang XU Xiangang HU Xiaobo LI Juan WANG Yingmin JIANG Shouzhen ZHANG Kai
Under electron beam irradiation,the in-situ formation of 2H-SiC dentritic nanocrystals from amorphous silicon carbide at room temperature was observed.The homogenous transition mainly occurs at the thin edge and on the surface of specimen where the energy obtained from electron beam irradiation is high enough to cause the amorphous crystallizing into 2H-SiC.
Li XianxiangHu XiaoboJiang ShouzhengDong JieXu XiangangJiang Minhua
Choice of crucible material is a key issue during the growth of AIN crystal. The stabilities at high temperature and life-spans of boron nitride （BN） crucible, tantalum （Ta） crucible and tungsten （W） crucible were compared. Tantalum crucible behaved worse at high temperature and life-span was shortened as compared with the other two crucible materials. It was very crisp and easy to crack. In contrast, self-seeded AIN crystals with different morphologies could be obtained at different high temperatures using BN crucible. The boron nitride crucible was stable below 2200 ℃, above which it would decompose. Thus it was unsuitable for the bulky AIN crystal growth. Tungsten crucible could endure the temperatures higher than 2200℃. Unfortunately we could only get AIN polycrystallines using tungsten crucible. After 50- 100 hours＇ run, the crucible was destroyed completely due to the multiple deep cracks. XRD results of destroyed tungsten crucible indicated that the main phases are tungsten carbide and tungsten nitride.
