Photoluminescence （PL） spectroscopy and photoreflectance （PR） spectroscopy are very useful techniques for studying the properties of materials. In this paper, the same material of Cu-rich metal-organic vapour phase epitaxy （MOVPE） grown CuGaSe2 layer is investigated in a temperature range from 20 to 300 K to compare these two techniques. Both PL and PR spectra appear red shifted, less intense and broadened. The temperature dependence of interband transitions is studied by using the Manoogian Leclerc equation. The values of the band gap energy at T=0K and the effective phonon temperature are estimated. The temperature dependences of intensities and broadenings of PL and PR spectral lines are also analysed. Based on the results of the comparison, the features and applications of the PL and PR can be shown in detail.
This paper reports the current-voltage characteristics of [001]-oriented AlAs/InxGa1-xAs/GaAs resonant tunnelling diodes （RTDs） as a function of uniaxial external stress applied parallel to the [110] and the [1^-10] orientations, and the output characteristics of the GaAs pressure sensor based on the pressure effect on the RTDs. Under [110] stress, the resonance peak voltages of the RTDs shift to more positive voltages. For [1^-10] stress, the peaks shift toward more negative voltages. The resonance peak voltage is linearly dependent on the [110] and [1^-0] stresses and the linear sensitivities are up to 0.69 mV/MPa, -0.69 mV/MPa respectively. For the pressure sensor, the linear sensitivity is up to 0.37 mV/kPa.
Hexagonal GaN epilayer grown on sapphire substrate by metal organic chemical vapour deposition （MOCVD） is studied using Raman scattering and photoluminescence in a temperature range from 100K to 873 K. The model of strain （stress） induced by the different lattice parameters and thermal coefficients of epilayer and substrate as a function of temperature is set up. The frequency and the linewidth of E2^high mode in a GaN layer are modelled by a theory with considering the thermal expansion of the lattice, a symmetric decay of the optical phonons, and the strain （stress） in the layer. The temperature-dependent energy shift of free exeiton A is determined by using Varshni empirical relation, and the effect of strain （stress） is also investigated. We find that the strain in the film leads to a decreasing shift of the phonon frequency and an about 10meV-inereasing shift of the energy in a temperature range from 100 K to 823 K.
