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国家重点基础研究发展计划(2006CB605105)

作品数:2 被引量:5H指数:2
相关作者:李翠伟陈克丕更多>>
相关机构:华北电力大学北京交通大学更多>>
发文基金:国家重点基础研究发展计划国家自然科学基金更多>>
相关领域:理学化学工程更多>>

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Magnetism induced by nonmagnetic dopants in zinc-blende SiC: First-principle calculations被引量:3
2010年
Magnetism induced by the nonmagnetic dopants in the zinc-blende SiC (3C-SiC) is investigated by first-principle calculations. The atoms of the first 20 elements in the periodic table except inert gas are used to replace either Si or C atoms as dopants. We find that some nonmagnetic substitutional dopants (mainly the Group IA, Group IIA, Group IIIB, and Group VIIB elements) prefer the spin-polarized ground states with local magnetic moments. In general, the condition for obtaining the local magnetic moments and the magnetic ground state requires that the dopants are p-type and have large electronegativity difference from the neighboring host atoms. The magnetic moments can be tuned over a range between 1 μ B and 3 μ B by doping with the nonmagnetic elements. The nearest-neighbor exchange couplings J 0 between the local magnetic moments are quite large and the codoping method is proposed to increase the dopant concentration. These imply that the nonmagnetic doping in SiC may exhibit collective magnetism. Moreover, the Group IIA Mg and Ca atoms substituting the preferred Si atoms favor the ferromagnetic ground states with the half-metallic electronic properties, which suggests that Mg or Ca substitutional doping on the Si sites in SiC could be a potential route to fabricating the diluted magnetic semiconductors.
LIU ZhaoQing & NI Jun Department of Physics and Key Laboratory of Atomic and Molecular Nanoscience (Ministry of Education), Tsinghua University, Beijing 100084, China
关键词:NONMAGNETICMAGNETISMSICFIRST-PRINCIPLE
钛酸铜钙/钛酸钙复合陶瓷的制备和介电性能被引量:2
2009年
以CaCO3、TiO2、CuO为原料,采用两种工艺途径制备了(1-x)CCTO-xCTO(0≤x≤1)复合陶瓷材料。采用X射线衍射仪、扫描电子显微镜、阻抗分析仪对(1-x)CCTO-xCTO复相陶瓷的相组成、显微结构特征和介电性能进行了研究,发现不同工艺途径制备的(1-x)CCTO-xCTO复合陶瓷的显微结构略有差异,但介电性能基本相同,表明两种工艺途径制备的陶瓷中CCTO和CTO具有相似的连接情况。此外,还发现2/8CCTO-6/8CTO复合陶瓷在室温和1kHz频率时,材料的介电常数ε接近1500,且介电损耗tgδ小于0.08。
陈克丕李翠伟
关键词:钛酸铜钙钛酸钙复合陶瓷介电性能
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