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国家自然科学基金(s50775209)

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Pressure effect study on the Ⅰ-Ⅴ property of the GaAs-based resonant tunnelling structure by photoluminescence measurement
2010年
This paper discusses the I-V property of the GaAs-based resonant tunnelling structure (RTS) under external uniaxial pressure by photoluminescence studies. Compressive pressure parallel to the [110] direction, whose value is determined by Hooke's law, is imposed on the sample by a helix micrometer. With the increase of the applied external uniaxial compressive pressure, the blue shift and splitting of the luminescence peaks were observed, which have some influence on the I-V curve of RTS from the point of view of the energy gap, and the splitting became more apparent with applied pressure. Full width at half maximum broadening could also be observed.
李秋柱王楷群菅傲群刘鑫张斌珍
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