本文报道了采用分子束外延技术制备的三色In As/Ga As量子点红外探测器.器件采用nin型结构,吸收区结构是在In Ga As量子阱中生长含有Al Ga As插入层的In As量子点,器件在77 K下的红外光电流谱有三个峰值:6.3,10.2和11μm.文中分析了它们的跃迁机制,并且分别进行了指认.因为有源区采用了不对称结构,所以器件在外加偏压正负方向不同时,光电流谱峰值的强度存在一些差异.不论在正偏压或者负偏压下,当偏压达到较高值,再进一步增大偏压时,都出现了对应于连续态的跃迁峰强度明显下降的现象,这是由量子点基态与阱外连续态的波函数交叠随着偏压进一步增大而迅速减小导致的.
We present the fabrication of a mid-wavelength infrared focal plane array （FPA） based on type-II InAs/GaSb strain layer superlattices （SLs）. The detectors contain a 400-period 8 ML InAs/8 ML GaSb SL active layer, which is grown by solid source molecular beam epitaxy on GaSb （100） N type substrates. Lattice mismatch between the superlattices and GaSb substrate achieves 148.9 ppm. The full width at half maximum of the first or- der satellite peak from X-ray diffraction was 28 arcsec. Single element detectors and FPA with a 128 x 128 pixels were fabricated using citric acid based solution wet chemical etching. Chemical and physical passivation effectively reduces the surface leakage and this process was characterized by I-V measurement. The devices showed a 50% cut-off wavelength of 4.73 μm at 77 K. The photodiode exhibited an RoA of 103 f2. cm2. The FPA was characterized with an integration time of 0.5 ms and F/2.0 optics at 77 K and the average blackbody detectivity of the detectors is 2.01 × 10^9 cm.Hz^1/2/W.
2μm A1GaAsSb/InGaSb type-I quantum-well high-power laser diodes （LDs） are grown using molec- ular beam epitaxy. Stripe-type waveguide single LD （single emitter） and array LD （four emitters） devices without facet coatings are fabricated. For the single LDs （single emitter） device, the maximum output power under contin- uous wave （CW） operation is 0.5 W at 10℃ with a threshold current density of 150 A/cm^2 and a slope efficiency of 0.17 W/A, the output powers under the pulse mode in the 5% duty cycles are much higher, up to 0.98 W. For the array LD devices, the maximum output powers are 1.02 W under the CW mode and 3.03 W under the pulse mode at room temperature.
The electronic structure of InAs/AlSb/GaSb quantum wells embedded in AlSb barriers and in the presence of a perpendicular magnetic field is studied theoretically within the 14-band ？？ · ？？ approach without making the axial approximation.At zero magnetic field, for a quantum well with a wide In As layer and a wide GaSb layer, the energy of an electron-like subband can be lower than the energy of hole-like subbands. As the strength of the magnetic field increases, the Landau levels of this electron-like subband grow in energy and intersect the Landau levels of the hole-like subbands. The electron–hole hybridization leads to a series of anti-crossing splittings of the Landau levels. The magnetic field dependence of some dominant transitions is shown with their corresponding initial-states and final-states indicated. The dominant transitions at high fields can be roughly viewed as two spin-split Landau level transitions with many electron–hole hybridization-induced splittings. When the magnetic field is tilted, the electron-like Landau level transitions show additional anti-crossing splittings due to the subband-Landau level coupling.
We investigate the dark current mechanism for an unpassivated mid wavelength(MW) type II InAs/GaSb superlattice infrared photodetector by doing the variablearea diode tests. The bulk resistance-area product and the resistivity due to the surface current are determined to be17.72 X cm2 and 704.23 X cm at 77 K, respectively. It is found that for all the mesa sizes used, the dark current is dominated or predominated by the surface component, and with scaling back the mesa size, the surface current increases while the bulk component decreases. The activation energy is determined to be 145 meV for the temperature range around 140–280 K, while it is 6 meV when temperature is below 100 K. It is also found that the dark current is dominated by the generation-recombination current for the MW device when temperature is between140 and 280 K.
A very long wavelength infrared（VLWIR） focal plane array based on In As/Ga Sb type-Ⅱ super-lattices is demonstrated on a Ga Sb substrate. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15.2 μm, at 77 K.A 320×256 VLWIR focal plane array with this design was fabricated and characterized. The peak quantum efficiency without an antireflective coating was 25.74% at the reverse bias voltage of-20 mV, yielding a peak specific detectivity of 5.89×10^10cm·Hz^1/2·W^-1. The operability and the uniformity of response were 89% and 83.17%. The noise-equivalent temperature difference at 65 K exhibited a minimum at 21.4 mK, corresponding to an average value of 56.3 mK.
Xi HanWei XiangHong-Yue HaoDong-Wei JiangYao-Yao SunGuo-Wei WangYing-Qiang XuZhi-Chuan Niu
The GaSb-based laser shows its superiority in the 3-4 ~tm wavelength range. However, for a quantum well （QW） laser structure of InGaAsSb/AIGaInAsSb multiple-quantum well （MQW） grown on GaSb, uniform content and high com- pressive strain in InGaAsSb/A1GaInAsSb are not easy to control. In this paper, the influences of the growth tempera- ture and compressive strain on the photoluminescence （PL） property of a 3.0μm lnGaAsSb/A1GaInAsSb MQW sample are analyzed to optimize the growth parameters. Comparisons among the PL spectra of the samples indicate that the Ino.485GaAso.184Sb/Alo.3Gao.45Ino.25Aso.22Sbo.78 MQW with 1.72% compressive strain grown at 460 ~C posseses the op- timum optical property. Moreover, the wavelength range of the MQW structure is extended to 3.83 μm by optimizing the parameters.
The exchange effect and the magneto-plasmon mode dispersion are studied theoretically for an anisotropic twodimensional electronic system in the presence of a uniform perpendicular magnetic field.Employing an effective lowenergy model with anisotropic effective masses,which is relevant for a monolayer of phosphorus,the exchange effect due to the electron-electron interaction is treated within the self-consistent Hartree-Fock approximation.The magnetoplasmon mode dispersion is obtained by solving a Bethe-Salpeter equation for the electron density-density correlation function within the ladder diagram approximation.It is found that the exchange effect is reduced in the anisotropic system in comparison with the isotropic one.The magneto-plasmon mode dispersion shows a clear dependence on the direction of the wave vector.
