SiC substrates grown by the sublimation method still have high densities of structural defects such as dislocations,micropipes,low-angle grain boundaries,macrodefects and polytypes.Wet etching was effectively used to study the defects of SiC.Etch pit shapes of defects and their origins were discussed.Most of the defects originate in the initial growth stage.Thus to optimize the early growth conditions especially the temperature distribution is a crucial problem.
Li JuanWang YingminChen XiufangXu XiangangHu XiaoboJiang Minhua
Under electron beam irradiation,the in-situ formation of 2H-SiC dentritic nanocrystals from amorphous silicon carbide at room temperature was observed.The homogenous transition mainly occurs at the thin edge and on the surface of specimen where the energy obtained from electron beam irradiation is high enough to cause the amorphous crystallizing into 2H-SiC.
Li XianxiangHu XiaoboJiang ShouzhengDong JieXu XiangangJiang Minhua
