A reproducible terahertz （THz） photocurrent was observed at low temperatures in a Schottky wrap gate single electron transistor with a normal-incident of a CH3OH gas laser with the frequency 2.54THz. The change of source-drain current induced by THz photons shows that a satellite peak is generated beside the resonance peak. THz photon energy can be characterized by the difference of gate voltage positions between the resonance peak and satellite peak. This indicates that the satellite peak exactly results from the THz photon-assisted tunneling. Both experimental results and theoretical analysis show that a narrow spacing of double barriers is more effective for the enhancement of THz response.
Silicon crystal-facet-dependent nanostructures have been successfully fabricated on a （100）-oriented silicon-oninsulator wafer using electron-beam lithography and the silicon anisotropic wet etching technique. This technique takes advantage of the large difference in etching properties for different crystallographic planes in alkaline solution. The minimum size of the trapezoidal top for those Si nanostructures can be reduced to less than 10nm. Scanning electron microscopy （SEM） and atomic force microscopy （AFM） observations indicate that the etched nanostructures have controllable shapes and smooth surfaces.
