Using NH3 as nitrogen source gas, N-doped ZnO （ZnO：N） thin films in c-axis orientation were deposited on glass substrates by radio frequency magnetron sputtering at room temperature. The ZnO：N thin films display significant increase of resistivity and decrease of photoluminescence intensity. As-grown ZnO：N material was used as active channel layer and Si3N4 was used as gate insulator to fabricate thin-film transistor. The fabricated devices on glasses demonstrate typical field effect transistor characteristics.
The energy band structure with type-I alignment at the PbTe/CdTe（111） heterojunction interface is determined by the ultraviolet photoelectron spectrum using synchrotron radiation. The valence band and conduction band offsets are obtained to be 0.09±0.12 and 1.19±0.12 eV, respectively. These results are in agreement with theoretically predicted ones. The accurate determination of the valence band and conduction band offsets is useful for the fundamental understanding of the mid-infrared light emission from the PbTe/CdTe heterostructures and its application in devices.
