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Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Al0.25Ga0.75N/AlN/GaN heterostructures: The leakage current mechanism in Schottky contacts （SCs） to Al0.25Ga0.75N/GaN heterostructures incorporated by...; Sen HuangBo ShenFujun XuFang LinZhenlin MiaoJie SongLin LuZhixin QinZhijian YangGuoyi Zhang

AlxGa1-x N／GaN双量子阱的结构和掺杂浓度对子带间跃迁波长和吸收系数的影响被引量：6: 2008年; 用薛定谔方程和泊松方程自洽计算的方法研究了Al0.75Ga0.25N/GaN对称双量子阱(DQWs)中子带间跃迁(ISBT)的波长和吸收系数对中间耦合势垒高度、中间耦合势垒宽度、势阱宽度和势垒掺杂浓度的依赖关系.研究发现,第一奇序子带S1ood与第二偶序子带S2even ISBT波长随着中间耦合势垒高度的降低而变短.当中间耦合势垒高度高于0.62eV时,S1odd-S2even ISBT吸收系数随着中间耦合势垒的降低而增加.当减小AlxGa1-xN/GaN的DQWs中间耦合势垒宽度时,S1odd-S2even ISBT波长将变短,其吸收系数变大.另一方面,当对称DQWs的势阱宽度大于1.9nm时,S1odd-S2even ISBT波长随着势阱的变窄而减小,S1odd-S2even ISBT吸收系数随着势阱的变窄而增加.当势垒中的掺杂浓度小于1018/cm3时,S1odd-S2even ISBT波长基本不随掺杂浓度变化,而吸收系数随掺杂浓度的增加而增加.这些结果对于利用DQWs实现工作于光纤通信波段超快的、基于三能级或四能级系统的双色光电子器件的应用具有指导意义.; 雷双瑛沈波张国义

高Al组分Al_xGa_(1-x)N薄膜的弹性-塑性力学性质被引量：1: 2007年; 采用纳米压痕方法,研究了AlN/spphire模板上的高Al组分AlxGa1-xN薄膜的力学性质,特别是弹性-塑性转变行为.研究表明,AlxGa1-xN薄膜的杨氏模量E随着Al组分的增加而增大,薄膜中产生塑性形变所必要的剪切应力也随着Al组分的增加而增大.在AlxGa1-xN薄膜纳米压痕实验中,观察到位移不连续的跳断('pop-in')行为,并且发现'pop-in'行为强烈依赖于Al组分,Al组分的增加导致这种行为的减少.我们认为随着Al组分的增加,AlxGa1-xN中键能的增强和由于AlxGa1-xN与AlN/sapphire模板之间晶格失配减少这两个因素增加了AlxGa1-xN中新位错形成的阻力,从而导致了AlxGa1-xN薄膜中的'pop-in'行为随Al组分增加而减少.; 许福军沈波王茂俊许谏苗振林杨志坚秦志新张国义蔺冰白树林; 关键词：杨氏模量力学性质塑性形变

Al_xGa_(1-x)N/GaN异质结构中二维电子气的自旋性质: 2009年; Ⅲ族氮化物材料有很长的电子自旋弛豫时间以及很高的居里温度,成为近年来半导体自旋电子学研究的重要材料体系之一。介绍了目前两种最主要的研究AlxGa1-xN/GaN异质结构中二维电子气(2DEG)自旋性质的物理效应:磁电阻的舒伯尼科夫-德哈斯拍频振荡和弱反局域效应,回顾了AlxGa1-xN/GaN异质结构中2DEG自旋性质的研究进展。AlxGa1-xN/GaN异质结构材料中有很强的极化电场,诱导产生很高浓度的2DEG,能够产生相当大能量的自旋分裂,并且这种自旋分裂可以被栅压所调控,因此在自旋场效应晶体管方面有很好的应用前景。然而要实现GaN基自旋电子学器件的应用,GaN中自旋注入效率是目前所面临的问题。; 唐宁沈波韩奎; 关键词：二维电子气自旋磁输运

Low resistance Ti/Al/Ni/Au Ohmic contact to （NH4）2Sx treated n-type GaN for high temperature applications: Low resistance Ti/Al/Ni/Au Ohmic contact to （NH4）2Sx treated n-type GaN has been studied in the temperature ra...; F.LinB.ShenS.HuangF.J.XuH.Y YangW.H.ChenN.MaZ.X.QinG.Y.Zhang

Influence of applied electric field on the absorption coefficient and subband distances in asymmetrical AlN/GaN coupled double quantum wells: 2009年; The influence of applied electric fields on the absorption coefficient and subband distances in asymmetrical A1N/GaN coupled double quantum wells （CDQWs） has been investigated by solving SchrSdinger and Poisson equations self-consistently. It is found that the absorption coefficient of the intersubband transition （ISBT） between the ground state and the third excited state （lodd - 2even） can be equal to zero when the electric fields are applied in asymmetrical A1N/GaN CDQWs, which is related to applied electric fields induced symmetry recovery of these states. Meanwhile, the energy distances between 1odd - 2even and 1even - 2even subbands have different relationships from each other with the increase of applied electric fields due to the different polarization-induced potential drops between the left and the right wells. The results indicate that an electrical-optical modulator operated within the opto-communication wavelength range can be realized in spite of the strong polarization-induced electric fields in asymmetrical A1N/GaN CDQWs.; 岑龙斌沈波秦志新张国义

Morphology and microstructure evolution of AlxGa1-xN epilayers grown on GaN/sapphire templates with AlN interlayers observed by transmission electron microscopy: Morphology and microstructure evolution of Al0.3Ga0.7N epilayers grown on GaN/sapphire templates with low-temp...; L.LuB.ShenF.J.XuS.HuangZ.L.MiaoZ.X.QinZ.J.YangG.Y.ZhangX.P ZhangJ.XuD.P.Yu

Al_xGa_(1-x)N/GaN异质结构中2DEG的塞曼自旋分裂: 通过在低温和强磁场下的磁输运测量研究了非故意掺杂Al_(0.24)Ga_(0.76)N/GaN异质结构中二维电子气(2DEG)的磁电阻振荡现象。在强磁场下观察到了表征2DEG塞曼自旋分裂的舒勃尼科夫-德哈斯(SdH)振荡...; 唐宁沈波韩奎卢芳超许福军秦志新张国义; 文献传递

Crystalline quality of InxAl1-xN with different indium contents around lattice-matched to GaN: 200 nm thick InxAl1-xN epilayers around lattice-matched to GaN were grown on GaN templates by MOGVD.The elasti...; Zhenlin MiaoTongjun YuBo ShenFujun XuJie SongFang LinLubing ZhaoZhijian Yang

Al_xGa_(1-x)N/GaN异质结构中2DEG的塞曼自旋分裂: 2008年; 通过在低温和强磁场下的磁输运测量研究了非故意掺杂Al0.24Ga0.76N/GaN异质结构中二维电子气(2DEG)的磁电阻振荡现象。在强磁场下观察到了表征2DEG塞曼自旋分裂的舒勃尼科夫-德哈斯(SdH)振荡的分裂峰。通过分析SdH分裂峰的位置,获得了塞曼自旋分裂能量和g*的大小,发现由于交换相互作用,g*比g0有了显著的增加,同时g*随着磁场的增大而增大,说明随着磁场的增大,电子与电子的交换相互作用增强。; 唐宁沈波韩奎卢芳超许福军秦志新张国义; 关键词：二维电子气自旋

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北京市自然科学基金(4062017)