您的位置: 专家智库 > >

国家自然科学基金(60176026)

作品数:2 被引量:11H指数:2
相关作者:赵佰军杜国同杨小天刘大力马艳更多>>
相关机构:吉林大学更多>>
发文基金:国家自然科学基金国家高技术研究发展计划更多>>
相关领域:电子电信理学更多>>

文献类型

  • 2篇期刊文章
  • 2篇会议论文

领域

  • 2篇电子电信
  • 2篇理学

主题

  • 3篇MOCVD
  • 1篇液晶
  • 1篇声表面波
  • 1篇声表面波器件
  • 1篇手性
  • 1篇手性液晶
  • 1篇聚硅氧烷
  • 1篇光谱
  • 1篇光谱研究
  • 1篇硅氧烷
  • 1篇红外
  • 1篇红外光
  • 1篇红外光谱
  • 1篇红外光谱研究
  • 1篇PL
  • 1篇PLASMA
  • 1篇SAPPHI...
  • 1篇ZNO_FI...
  • 1篇AFM
  • 1篇ENHANC...

机构

  • 2篇吉林大学
  • 1篇教育部

作者

  • 1篇张源涛
  • 1篇杨洪军
  • 1篇赵冰
  • 1篇王金忠
  • 1篇刘博阳
  • 1篇孙丽
  • 1篇王旭
  • 1篇杨天鹏
  • 1篇马艳
  • 1篇刘大力
  • 1篇杨小天
  • 1篇杜国同
  • 1篇赵佰军

传媒

  • 1篇高等学校化学...
  • 1篇Chemic...

年份

  • 1篇2004
  • 3篇2003
2 条 记 录,以下是 1-4
排序方式:
ZnO thin films growth,characteristics and applications
Undoped,N-doped and p-type ZnO as well as MgZnO alloy thin films were grown by metal-organic chemical vapor de...
Guotong Du~(1
关键词:MOCVDDOPE
声表面波器件用〈110〉取向ZnO薄膜的MOCVD生长被引量:7
2003年
ZnO films with <110> orientation were grown on R-Al 2O 3 substrates by LP-MOCVD, and the growth temperature was optimized. The quality of crystal, surface morphology and optical characteristic of the samples were investigated by XRD, AFM and PL method. The experimental results show that the FWHM of the optimized sample is only 0.50°. Compared with that of the sample grown on C-Al 2O 3 material under the same conditions, the surface morphology of the first sample is denser and smooth, while the PL spectra indicate that the exciton emitting intensity of <110> oriented ZnO film in the ultraviolet range is lower. However, the deep-level emission related to the intrinsic defects disappears in the spectrum. All above indicate that the <110> oriented ZnO film is more suitable for fabrication of the film SAWF with a low loss and a high frequency than for fabrication of the emitting device in ultraviolet range.
赵佰军杜国同王金忠杨洪军张源涛杨小天马艳刘博阳杨天鹏刘大力
关键词:声表面波器件MOCVDAFMPL
红外光谱研究聚硅氧烷侧链手性液晶LB膜
目前,有关铁电液晶(FLC)的基础研究及其应用已引起人们的极大关注。LB技术是一种对分子的取向,排列和结构进行有效的控制的方法。本文用红外光谱技术研究P(Ⅲ)和M(Ⅲ)LB膜的结构与取向。π-A曲线的测量和LB膜的制备是...
王旭赵冰孙丽樊玉国杜国同
文献传递
Influence of Annealing on Properties of ZnO Films Grown via Plasma-enhanced MOCVD被引量:4
2003年
The structural and the optical properties of ZnO films with high quality grown via plasma-enhanced metal\|organic chemical vapour deposition(MOCVD) on C-plane sapphire substrate were studied. The crystallinity and the optical properties of the films are greatly improved having been annealed in oxygen plasma atmosphere. The structure, the band gap and the binding energy of O 1s electrons, and the molar ratio of O to Zn were determined by X-ray diffraction(XRD), photoluminescence(PL) and X-ray photoelectron scan methods. For both the annealed and the as-grown films, the exciton peak features were observed at room temperature. The band-edge photoluminescence of the annealed film is much stronger than that of the as-grown film, and the exciton peak relating to the deep level at 439 nm disappears. The molar ratio of O to Zn in the annealed film is 0 91, while it is 0 78 for the as-grown film.
ZHAO Bai-junDU Guo-tongYANG Hong-junWANG Jin-zhongZHANG Yuan-taoYANG Xiao-tianLIU Bo-yangMA Yan YANGTian-pengLIU Da-liLI Wan-chengFANG Xiu-jun
关键词:SAPPHIRE
共1页<1>
聚类工具0