Polyvinylidene fluoride/lead zirconate titanate(PVDF/PZT)composite films have been prepared by direct ink writing and the effect of PZT content on crystallization behavior and electrical properties of film were systematically investigated.The composite films were characterized by scanning electron microscope(SEM),X-ray diffractometer(XRD),Flourier transform infrared spectroscope(FTIR)and differential scanning calorimeter(DSC).The results show that,surface modified PZT powder(PZT@PDA)is successfully coated by polydopamine(PDA),resulting in a large number of polar groups that interact with the-CF_(2)-groups in PVDF,inducing the generation of polarβphase due to hydrogen bonding formed in the interaction.Theβphase content in composite film increases with increasing PZT@PDA content,up to 28.09%as with 5 wt.%PZT@PDA.PZT@PDA plays a role of nucleating agent to promote the generation of polar phases in the film and also acts as an impurity hindering the growth of nuclei to reduce crystallinity.Moreover,the presence of PZT@PDA in interfaces provides more sites for the occurrence of interfacial polarization and thus improving the electrical properties of films.The composite film with 5 wt.%PZT@PDA possesses the highest dielectric constant(8.61)and residual polarization value(0.6803μC/cm^(2)).
As the demand for computing power in data centers continues to grow, balancing data transmitting speed and energy efficiency has emerged as a critical challenge. Highbandwidth, low-power interconnection schemes are increasingly recognized as core requirements for next-generation intelligent computing center designs^([1, 2]). For short-range optical interconnections of intra-chip and inter-chip—typically covering tens of meters or less—microring resonant modulators (MRM) are emerging as an ideal solution.
